Selective area growth of InP by plasma assisted solid-source epitaxy
Identifieur interne : 000024 ( Main/Exploration ); précédent : 000023; suivant : 000025Selective area growth of InP by plasma assisted solid-source epitaxy
Auteurs : RBID : ISTEX:11664_1996_Article_BF02666614.pdfEnglish descriptors
Abstract
Complete selective area growth of InP could be achieved at standard molecular beam epitaxial growth temperatures by using solid source epitaxy with an additional hydrogen rf-plasma (27 MHz) excited in the reaction chamber. By optimization of the process parameters such as substrate temperature, plasma power, and phosphorus overpressure, mirror-like InP-layers with geometry independent growth rates were grown on SiN-patterned InP substrates without polycrystalline growth on the mask. Since selective growth is also possible in an argon plasma, we conclude that a physical desorption process is the mechanism for selective area growth in this plasma assisted epitaxy method. Furthermore, the selectivity can be controlled by a dc-bias of the substrate, which influences the mean energy of the impinging ions, thereby changing the desorption rate of atoms from the mask.
DOI: 10.1007/BF02666614
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Selective area growth of InP by plasma assisted solid-source epitaxy</title><author><name>I. Aller</name><affiliation wicri:level="3"><mods:affiliation>Institut für Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstr. 25, D-64283, Darmstadt, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstr. 25, D-64283, Darmstadt</wicri:regionArea><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name>H. L. Hartnagel</name><affiliation wicri:level="3"><mods:affiliation>Institut für Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstr. 25, D-64283, Darmstadt, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstr. 25, D-64283, Darmstadt</wicri:regionArea><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1996_Article_BF02666614.pdf</idno><date when="1996">1996</date><idno type="doi">10.1007/BF02666614</idno><idno type="wicri:Area/Main/Corpus">000765</idno><idno type="wicri:Area/Main/Curation">000765</idno><idno type="wicri:Area/Main/Exploration">000024</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Hydrogen plasma</term><term>Indium phosphide</term><term>Selective area growth</term><term>Solid source epitaxy</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Complete selective area growth of InP could be achieved at standard molecular beam epitaxial growth temperatures by using solid source epitaxy with an additional hydrogen rf-plasma (27 MHz) excited in the reaction chamber. By optimization of the process parameters such as substrate temperature, plasma power, and phosphorus overpressure, mirror-like InP-layers with geometry independent growth rates were grown on SiN-patterned InP substrates without polycrystalline growth on the mask. Since selective growth is also possible in an argon plasma, we conclude that a physical desorption process is the mechanism for selective area growth in this plasma assisted epitaxy method. Furthermore, the selectivity can be controlled by a dc-bias of the substrate, which influences the mean energy of the impinging ions, thereby changing the desorption rate of atoms from the mask.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="833a69be3a441dd84f505b435e1b5fd15390b094"><titleInfo lang="eng"><title>Selective area growth of InP by plasma assisted solid-source epitaxy</title></titleInfo><name type="personal"><namePart type="given">I.</namePart><namePart type="family">Aller</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstr. 25, D-64283, Darmstadt, Germany</affiliation></name><name type="personal"><namePart type="given">H. L.</namePart><namePart type="family">Hartnagel</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstr. 25, D-64283, Darmstadt, Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1995-06-19</dateCreated><dateValid encoding="w3cdtf">2007-07-01</dateValid><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Complete selective area growth of InP could be achieved at standard molecular beam epitaxial growth temperatures by using solid source epitaxy with an additional hydrogen rf-plasma (27 MHz) excited in the reaction chamber. By optimization of the process parameters such as substrate temperature, plasma power, and phosphorus overpressure, mirror-like InP-layers with geometry independent growth rates were grown on SiN-patterned InP substrates without polycrystalline growth on the mask. Since selective growth is also possible in an argon plasma, we conclude that a physical desorption process is the mechanism for selective area growth in this plasma assisted epitaxy method. Furthermore, the selectivity can be controlled by a dc-bias of the substrate, which influences the mean energy of the impinging ions, thereby changing the desorption rate of atoms from the mask.</abstract><subject lang="eng"><genre>Key words</genre><topic>Hydrogen plasma</topic><topic>indium phosphide</topic><topic>selective area growth</topic><topic>solid source epitaxy</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1996</partNumber><partNumber>Volume: 25</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1996-03-01</dateIssued><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 40</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1996</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02666614</identifier><identifier type="matrixNumber">Art20</identifier><identifier type="local">BF02666614</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>421</start><end>424</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1996</recordOrigin><recordIdentifier>11664_1996_Article_BF02666614.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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